processes期刊版面费

审稿周期大概1-6个月都是有过的，具体看编辑部和审稿人的情况，至于版面费只能联系杂志社报价了！有点是不收费的，有的是几百到几千都是有的！Journal of Manufacturing Processes [1526-6125] 本刊收录在： Ei Compendex (2013年)本刊收录在： Ei Compendex (2015年)本刊收录在Web of Science： SCIE(2016版)主题分类：Engineering: Industrial EngineeringEngineering: Mechanical EngineeringEngineering: Production TechnologyEnvironmental Sciences: General and OthersInformation Technology: Computer Aided Design Production ControlMaterial Science and Metallurgy: General and Others

审稿周期大概1-6个月都是有过的，具体看编辑部和审稿人的情况，至于版面费只能联系杂志社报价了！有点是免费不收费的，有的是几百到几千都是有的！Journal of Manufacturing Processes [1526-6125] 本刊收录在： Ei Compendex (2013年)本刊收录在： Ei Compendex (2015年)本刊收录在Web of Science： SCIE(2016版)主题分类：Engineering: Industrial EngineeringEngineering: Mechanical EngineeringEngineering: Production TechnologyEnvironmental Sciences: General and OthersInformation Technology: Computer Aided Design & Production ControlMaterial Science and Metallurgy: General and Others

processes期刊是sci的，影响因子大概3左右，明年应该进行中科院分区，可能3区或者4区。SSCI/SCIE/AHCI/ESCI期刊查询官网为Web of Science Master Journal List。如果你是“精确性”查找，想确认期刊是否隶属于SSCI/SCIE/AHCI/ESCI，直接输入期刊的名称点击查询就可以看到。SCI即《科学引文索引》美国科学信息研究所创建的，收录文献的作者、题目、源期刊、摘要、关键词。不仅可以从文献引证的角度评估文章的学术价值，还可以迅速方便地组建研究课题的参考文献网络。SCI创刊于1961年，SCI(科学引文索引 )、EI(工程索引 )、ISTP(科技会议录索引 ) 是世界著名的三大科技文献检索系统，是国际公认的主要检索工具，其中以SCI最为重要。经过40年的发展完善，已从开始时单一的印刷型发展成为功能强大的电子化、集成化、网络化的大型多学科、综合性检索系统。SCI收录的论文主要是自然科学的基础研究领域，是目前国际上被公认的最具权威的科技文献检索工具。SCI所收录期刊的内容主要涉及数、理、化、农、林、医、生物等基础科学研究领域。选用刊物来源于40多个国家，50多种文字，其中主要的国家有美国、英国、荷兰、德国、俄罗斯、法国、日本、加拿大等，也收录部分中国（包括港澳台）刊物。

如果不选open，应该是不要版面费的，你可以询问一下编辑。 期刊名 semiconductor science and technology 出版周期: 月刊 中科院杂志分区 材料科学：综合分类下的 3 区期刊 近四年SCI 影响因子:2013年度 2012年度 2011年度 2010年度 206 921 723 323 出版社或管理机构 杂志由 IOP PUBLISHING LTD 出版或管理。 ISSN号：0268-1242 杂志简介/稿件收录要求 Subject Experimental and theoretical studies of the structural, electrical, optical and acoustical properties of bulk, low-dimensional and amorphous semiconductors; computational semiconductor physics; interface properties, including the physics and chemistry of heterojunctions, metal-semiconductor and insulator-semiconductor junctions; all multi-layered structures involving semiconductor Dopant Growth and preparation of materials, including both epitaxial ( molecular beam and chemical vapour methods) and bulk techniques; in situ monitoring of epitaxial growth processes, also included are appropriate aspects of surface science such as the influence of growth kinetics and chemical processing on layer and device Physics of semiconductor electronic and optoelectronic devices, including theoretical modelling and experimental demonstration; all aspects of the technology of semiconductor device and circuit Relevant areas of 'molecular electronics' and semiconductor structures incorporating Langmuir- Blodgett films; resists, lithography and metallization where they are concerned with the definition of small geometry The structural, electrical and optical characterization of materials and device Materials and device reliability: reliability evaluation of technologies; failure analysis and advanced analysis techniques such as SEM, E-beam, optical emission microscopy, acoustic microscopy techniques; liquid crystal techniques; noise measurement, reliability prediction and simulation; reliability indicators; failure mechanisms, including charge migration, trapping, oxide breakdown, hot carrier effects, electro-migration, stress migration; package- related failure mechanisms; effects of operational and environmental stresses on Papers will normally be categorized under one of four headings: electrical and optical properties, devices, crystal growth and materials, and